EL E 351 - Models and Circuits, I

2001 Catalog Data:     EL. E. 351, Models and Circuits I. Terminal characteristics of devices, graphical analysis, linear piece-wise analysis, two-port parameters, equivalent models, and circuits. Credit 3; Prerequisite: ENGR 360.

Textbook:     Rashid, Microelectronics Circuits. PWS Publishing, 1999.
    
References:     A. S. Sedra and K. C. Smith, Microelectronic Circuits, R.D. Irwin Company, 1996; and J.J. Cathey, Electronic Devices and Circuits (Schaum's Outline Series).
    
Coordinator: Dr. Charles E. Smith, Professor of Electrical Engineering
  Mr. W. Elliott Hutchcraft, Instructor
    
Goals:     Introduction to terminal characteristics of microelectronic devices and in-depth study of the analysis and design using mathematical models of active three-terminal, discrete components, and integrated circuit elements.


Prerequisite by Topic:
  1. Electrical Circuit Theory (ENGR 360)
  2. FORTRAN Programming(CSCI 251)

Topics:
  1. Introduction to Microelectronics and Design (2 classes)
  2. Characteristics and models of devices: brief introduction to device physics; bipolar transistors, FET, integrated circuits, biasing, nonlinear circuit models for diodes and transistors. (10 classes)
  3. Two-port networks and related topics: network gain and parameters with two-port characterization of three-terminal devices. (3 classes)
  4. Analysis and design of signal-stage amplifiers: graphical analysis, small-single analysis, Ebers-Moll equivalent model; network gains, and impedances including operational amplifiers. (18 classes)
  5. Analysis and design of single and multistage amplifiers: gain, bandwidth, loading. (6 classes)
  6. Tests (3 classes)

Computer Usage: Homework assignments based on the use of PSPICE/Schematic Capture Circuit Analysis Software (MicroSim)

Laboratory Progjects: Basic projects outside of class using solderless breadboards and components

  1. Biasing of diode and analysis
  2. Biasing of BJT and JFET/MOSFET Analysis
  3. Gain of BJT and JFET/MOSFET, and OPAMP Amplifiers
Estimated ABET Category Content:  Engineering Science: 2.5 credit
   Design: 0.5 credits

Prepared by: Mr. W. Elloitt Hutchcraft and Dr. Charles E. Smith
Date: June 26, 2001

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